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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Similarity in Band Gap Behavior of Modified Graphene with Different Types of Functionalization
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Similarity in Band Gap Behavior of Modified Graphene with Different Types of Functionalization

机译：不同类型功能化的改性石墨烯的带隙行为相似

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摘要

In this paper we summarize the band gap dependence for 2D graphene-based superlattices. We describe a mechanism of altering the electronic properties of graphene 2D superlattices formed by local hydrogenation, fluorination, and substitution with boron nitride or periodically arranged holes. Varying the distance between these regions significantly changes the electronic properties in a manner similar to the band gap behavior of graphene nanoribbons. Characteristic dependences of the band gap on the shifts of the regions along the zigzag and armchair directions (semiconductor m = 3p + 2 rule) were obtained. The origin of this effect is discussed and explained from an atomistic point of view.
机译：在本文中，我们总结了基于二维石墨烯的超晶格的带隙依赖性。我们描述了一种机制，该机制可改变通过局部氢化，氟化以及用氮化硼或周期性排列的孔取代而形成的石墨烯2D超晶格的电子性能。改变这些区域之间的距离会以类似于石墨烯纳米带的带隙行为的方式显着改变电子性能。获得了带隙对沿之字形和扶手椅方向的区域位移的特性依赖性（半导体m = 3p + 2规则）。从原子论的角度讨论和解释了这种效应的起源。

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