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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electronic Structure of the Perylene-Zinc Oxide Interface: Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects
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Electronic Structure of the Perylene-Zinc Oxide Interface: Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

机译:ylene-氧化锌界面的电子结构:光致电子转移和表面缺陷影响的计算研究

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摘要

The electronic properties of dye-sensitized semiconductor surfaces consisting of perylene chromophores chemisorbed on zinc oxide via different spacer-anchor groups have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.
机译:在密度泛函理论水平上,研究了染料敏化的半导体表面的电子性能,该表面由通过不同的间隔-锚固基团化学吸附在氧化锌上的per生色团组成。预测了供体态的能量分布和从染料到表面的光致电子转移速率。我们特别评估了在versus生色团和半导体之间插入的饱和与不饱和脂肪族间隔基的影响,以及表面缺陷对电子注入速率的影响。

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