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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy
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Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy

机译：开尔文力显微镜和X射线光电子发射显微镜相结合的硅锗异质结构功函数测量

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摘要

Work function in Si1-xGex heterostructures with Ge content in the 6% to 49% range was studied with high energy resolution by combining Kelvin force microscopy and X-ray photoelectron emission microscopy. Although the two methods are based on distinct physical mechanisms, we show that both techniques give the same work function differences between each Si1-xGex layer, as small as 20 meV. To detect such small work function differences, we put in evidence the necessity of preparing the Si1-xGex sample surface with polishing, HF etching and Ar+ sputtering. Such surface preparation allows, in principle, to reduce the deleterious influence of surface states, coming for instance from carbon atoms or native oxide, on quantitative work function extraction. We show in this paper that even after such a sample surface preparation, a strong band bending can be present, which causes a contrast inversion on the surface of the material and yields an artificially lower surface work function with respect to theoretical values. By using density functional theory simulations, we demonstrate that such inversion is likely due to residual carbon present on the surface.
机译：通过结合开尔文力显微镜和X射线光电子发射显微镜，以高能量分辨率研究了Ge含量在6％至49％范围内的Si1-xGex异质结构中的功函数。尽管这两种方法基于不同的物理机制，但我们证明这两种技术在每个Si1-xGex层之间都提供相同的功函数差异，小至20 meV。为了发现如此小的功函数差异，我们证明了通过抛光，HF蚀刻和Ar +溅射制备Si1-xGex样品表面的必要性。这种表面处理原则上可以减少例如碳原子或天然氧化物等表面状态对定量功函数提取的有害影响。我们在本文中表明，即使在进行了这样的样品表面处理后，仍会出现强带弯曲，这会导致材料表面的对比度反转，并相对于理论值产生人为降低的表面功函数。通过使用密度泛函理论模拟，我们证明了这种转化很可能是由于表面上存在残留碳所致。

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