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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Kinetic Investigation on the Photoetching Reaction of n-Type GaAs by Scanning Electrochemical Microscopy
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Kinetic Investigation on the Photoetching Reaction of n-Type GaAs by Scanning Electrochemical Microscopy

机译：扫描电化学显微镜对n型GaAs光蚀刻反应的动力学研究

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摘要

The physicochemical principle of photocorrosion and photoetching is the internal photoelectric effect of semiconductors. However, the kinetic investigation of interfacial charge transfer induced by this phenomenon has been seldom reported due to its microdomain bipolarity. GaAs is a direct band gap semiconductor with high saturated electron velocity and high electron mobility. Once the photogenerated electrons on a n-type GaAs surface are removed by Fe3+ in the solution, it will dissolve due to the residual positive holes; i.e., the photoetching process will occur. By employing scanning electrochemical microscopy (SECM), the photoetching rates of n-type GaAs are obtained about similar to 10(-4) mol.m(-2) s(-1) with Fe3+ cation as electron acceptor. The rate-determining step (rds) is proved as the charge separation process at low illuminating intensity, and the mass transfer of Fe3+ in the solution at high illuminating intensity. Moreover, the photoetching process is developed as a controllable micromachining method for semiconductor materials.
机译：光腐蚀和光蚀刻的物理化学原理是半导体的内部光电效应。然而，由于这种现象引起的界面电荷转移的动力学研究，由于其微区双极性而很少被报道。 GaAs是具有高饱和电子速度和高电子迁移率的直接带隙半导体。一旦溶液中的Fe3 +去除了n型GaAs表面上的光生电子，由于残留的正空穴，它将溶解。即，将发生光刻工艺。通过使用扫描电化学显微镜（SECM），以Fe3 +阳离子作为电子受体，可以得到大约10（-4）mol.m（-2）s（-1）的n型GaAs的光蚀刻速率。速率决定步骤（rds）被证明是低照度下的电荷分离过程，以及高照度下溶液中Fe3 +的传质。此外，光蚀刻工艺被开发为半导体材料的可控微加工方法。

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