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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Nanostructured Semiconducting PEDOT-TiO2/ZnO Hybrid Composites for Nanodevice Applications
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Nanostructured Semiconducting PEDOT-TiO2/ZnO Hybrid Composites for Nanodevice Applications

机译：用于纳米器件应用的纳米结构半导体PEDOT-TiO2 / ZnO杂化复合材料

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摘要

In this paper, we have developed a simple strategy for the preparation of hybrid nanocomposites of poly(3,4-ethylenedioxythiophene)-TiO2/ZnO (PZT) and demonstrated its application in a thermoelectric device. Hierarchical hetero-nanostructured TiO2/ZnO (ZTO) was prepared by a facile sol-gel process in the presence of a biocapping agent. PZT was prepared by in situ polymerization of EDOT in the presence of ZTO. It was characterized by UV-visible, FT-IR, XRD, Raman, SEM, TEM, and AFM analyses. Results revealed homogeneous distribution of ZTO with a heterocrystalline phase of wurtzite ZnO/anatase TiO2 having high density of various defects in the hybrid nanocomposite. Studies showed that ZTO is excellently interfaced with highly ordered self-assembled extended pi-layers of PEDOT chains, which could enhance the charge carrier concentration (3.92 x 10(20) cm(-3)) and charge carrier mobility (0.83 cm(2) V-1 s(-1)). Furthermore, we have demonstrated its application as a thermoelectric material by fabricating the device (Cu/PZT/Cu), which showed low thermal conductivity of 0.0495 Wm(-1)K(-1), Seebeck coefficient of 19.05 mu V K-1, power factor of 1.28 mu W m(-1)K(-2), and figure of merit of 4.8 x 10(-3) at ambient temperature. All of these excellent material properties of PZT suggest its application as an active material for the fabrication of nanoelectronic devices with large area.
机译：在本文中，我们开发了一种制备聚（3,4-乙撑二氧噻吩）-TiO2 / ZnO（PZT）杂化纳米复合材料的简单策略，并证明了其在热电设备中的应用。在生物封端剂的存在下，通过简便的溶胶-凝胶法制备了分层的异纳米结构的TiO2 / ZnO（ZTO）。在ZTO存在下，通过EDOT原位聚合制备PZT。通过紫外可见，FT-IR，XRD，拉曼，SEM，TEM和AFM分析对其进行表征。结果显示杂化纳米复合物中具有高密度的各种缺陷的纤锌矿型ZnO /锐钛矿型TiO2的杂晶相的ZTO分布均匀。研究表明ZTO与PEDOT链的高度有序的自组装扩展pi层具有良好的界面，这可以提高载流子浓度（3.92 x 10（20）cm（-3））和载流子迁移率（0.83 cm（2） ）V-1 s（-1））。此外，我们通过制造该器件（Cu / PZT / Cu）证明了其在热电材料中的应用，该器件显示出0.0495 Wm（-1）K（-1）的低热导率，19.05μV K-1的塞贝克系数。 ，功率因数为1.28μW m（-1）K（-2），品质因数在环境温度下为4.8 x 10（-3）。 PZT的所有这些优异的材料性能表明，其可作为活性材料用于制造大面积纳米电子器件。

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