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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electrochemical Delamination and Chemical Etching of Chemical Vapor Deposition Graphene: Contrasting Properties
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Electrochemical Delamination and Chemical Etching of Chemical Vapor Deposition Graphene: Contrasting Properties

机译：化学气相沉积石墨烯的电化学分层和化学刻蚀：对比特性

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摘要

Recent advancements in chemical vapor deposition techniques for the growth of graphene have enabled access to large-area and high quality graphene film for various applications. The key step in determining the quality of the final graphene films is the transfer process to desired substrates, with the goal of minimizing the amount of structural and chemical modification to the film. Multiple methods exist for this transfer process, with each method varying in the extent to which the graphene film is altered. Four fundamentally different transfer methods, including chemical etching and electrochemical delaminating, were employed to obtain graphene films from chemical vapor deposition graphene grown on Ni foil and the resulting films characterized using scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and cyclic voltammetry. These graphene films showed noticeable differences in their material properties in terms of amount of defects and elemental purities, with a dramatic influence on the voltammetric responses of the films toward several electrochemical probes. The choice of transfer procedure thus impacts the types of electrochemical applications that such graphene films are suitable for.
机译：用于石墨烯生长的化学气相沉积技术的最新进展使得能够获得用于各种应用的大面积和高质量的石墨烯膜。确定最终石墨烯薄膜质量的关键步骤是向所需基材的转移过程，目的是使薄膜的结构和化学修饰量最小。存在用于该转移过程的多种方法，每种方法在改变石墨烯膜的程度上有所不同。采用四种基本不同的转移方法，包括化学刻蚀和电化学分层，从在镍箔上生长的化学气相沉积石墨烯中获得石墨烯膜，并使用扫描电子显微镜，拉曼光谱，X射线光电子能谱和循环伏安法对所得膜进行表征。这些石墨烯薄膜在缺陷数量和元素纯度方面表现出明显的材料性能差异，对薄膜对几种电化学探针的伏安响应有显着影响。因此，转移程序的选择影响了这种石墨烯膜适合的电化学应用的类型。

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