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Poly[(diphenylsilanediyl) ethynediy1]: Structure and optical and electroluminescent properties

机译:聚[(二苯基硅烷二基)乙炔1]:结构以及光学和电致发光特性

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摘要

Poly[(diphenylsilanediyl)ethynediyl] with a band-gap energy of 5.2 eV is a wide-band-gap material with a photoluminescence maximum at a wavelength of 354 nm. It is suitable for the fabrication of ultraviolet electroluminescence diodes. The electroluminescence spectrum consists of a strong peak at 361 nm and a tail up to 570 nm. The external quantum emission efficiency at the main maximum, calculated in terms of emitted photons per transported electronic charge, is 0.01% (no sample optimization has been carried out). The electric characteristics are controlled by contact-limited currents and double injection. The geometry of the neutral oligo[(diphenylsilanediyl)ethynediyl] molecule and its infrared spectra and the changes in the geometries and charge distributions during the formation of the positive and negative ions have been calculated by quantum chemical methods. (C) 2007 Wiley Periodicals, Inc.
机译:带隙能量为5.2eV的聚[(二苯基硅烷二基)乙炔二基]是一种宽带隙材料,其在354nm的波长处具有最大的光致发光。它适用于制造紫外线电致发光二极管。电致发光光谱由一个在361 nm处的强峰和一个直至570 nm的尾巴组成。根据每个传输的电荷的发射光子计算,在最大最大值处的外部量子发射效率为0.01%(未进行样品优化)。电特性由接触限制电流和双注入控制。通过量子化学方法计算了中性低聚[(二苯基硅烷二基)乙炔二基]分子的几何形状及其红外光谱以及正负离子形成过程中几何形状和电荷分布的变化。 (C)2007 Wiley期刊公司

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