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Novel low-dielectric-constant copolyimide thin films composed with SiO 2 hollow spheres

机译:SiO 2中空球组成的新型低介电常数共聚酰亚胺薄膜

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摘要

A series of copolyimide/SiO2 hollow sphere thin films were prepared successfully based on bis[3,5-dimethyl-4-(4-aminophenoxy)phenyl]methane and 9,9-bis(4-(4-aminophenoxy)phenyl)fluorene (molar ratio = 3: 1) as diamine, and 4,4′-(4,4′-isopropylidenediphenoxy)bis(phthalic anhydride) as dianhydride, with different wt % SiO_2 hollow sphere powder with particle size 500 nm. Some films possessed excellent dielectric properties, with ultralow dielectric constants of 1.8 at 1 MHz. The structures and properties of the thin films were measured with Fourier transform infrared spectra, scanning electron microscope, thermogravimetric analysis, and dynamic mechanical thermal analysis. The polyimide (PI) films exhibited glass-transition temperatures in the range of 209- 273°C and possessed initial thermal decomposition temperature reaching up to 413-477°C in air and 418-472°C in nitrogen. Meanwhile, the composite films were also exhibited good mechanical properties.
机译:基于双[3,5-二甲基-4-(4-氨基苯氧基)苯基]甲烷和9,9-双(4-(4-氨基苯氧基)苯基)芴成功地制备了一系列共聚酰亚胺/ SiO2空心球薄膜(摩尔比= 3:1)作为二胺,并且4,4'-(4,4'-异丙基二苯二氧基)双(邻苯二甲酸酐)作为二酐,具有不同wt%的SiO_2空心球粉末,粒径为500nm。一些薄膜具有出色的介电性能,在1 MHz时具有1.8的超低介电常数。用傅立叶变换红外光谱,扫描电子显微镜,热重分析和动态机械热分析来测量薄膜的结构和性能。聚酰亚胺(PI)薄膜的玻璃化转变温度范围为209-273°C,并且在空气中的初始热分解温度高达413-477°C,在氮气中的初始热分解温度高达418-472°C。同时,复合膜还表现出良好的机械性能。

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