• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Polymer Science >Freestanding Ag2S/CuS PVA films with improved dielectric properties for organic electronics
【24h】

Freestanding Ag2S/CuS PVA films with improved dielectric properties for organic electronics

机译：独立的Ag2S / CuS PVA薄膜，具有改善的介电性能，可用于有机电子产品

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The prime goal of this work is to synthesize free-standing polyvinyl alcohol (PVA) films doped with Ag2S, CuS, Ag2S/CuS alloy, and Ag2S/CuS nanocomposites through the sol-gel route. The dependence of Ag2S content in the PVA nanocomposite films on both the real and imaginary parts of the complex permittivity and loss tangent values was examined. An enhanced dielectric constant was achieved with minimum dielectric loss due to the insulating silica layer. By changing the Ag2S content in Ag2S/CuS PVA films, the AC conductivity is improved with pure Ag2S nanoparticles exhibiting highest values of the order of 10(-6)-10(-9)S/cm. The Cole-Cole parameters were calculated and the semicircles observed in the plots indicate a single relaxation process. The results suggest that these composite films are potential materials for embedded capacitor applications. (c) 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016, 133, 43568.
机译：这项工作的主要目的是通过溶胶-凝胶法合成掺杂有Ag2S，CuS，Ag2S / CuS合金和Ag2S / CuS纳米复合材料的自立式聚乙烯醇（PVA）膜。研究了PVA纳米复合膜中Ag2S含量对复介电常数和损耗角正切值的实部和虚部的依赖性。由于绝缘二氧化硅层，以最小的介电损耗实现了增强的介电常数。通过更改Ag2S / CuS PVA膜中的Ag2S含量，纯净的Ag2S纳米颗粒的最高值约为10（-6）-10（-9）S / cm，从而提高了AC导电性。计算Cole-Cole参数，并在图中观察到的半圆表示单个松弛过程。结果表明，这些复合膜是嵌入式电容器应用的潜在材料。 （c）2016 Wiley Periodicals，Inc. J. Appl。 Polym。科学2016，133，43568。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号