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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Far-infrared and galvanomagnetic study of gallium doped PbTe
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Far-infrared and galvanomagnetic study of gallium doped PbTe

机译：镓掺杂PbTe的远红外和电磁研究

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摘要

The far-infrared reflectivity spectra of PbTe(Ga) (N_(Ga) = 0.1, 0.2, and 0.4 at. percent) alloys were measured in the 30-500 cm~(-1) spectral range at different temperatures and analyzed using a numerical fitting procedure based on the plasmon-phonon interaction model. The three local Ga modes at about 120, 150 and 220 cm~(-1) together with the strong plasmon-phonon coupling are observed. Using results of galvanomagnetic measurements carrier concentrations and the Fermi level temperature dependence are determined for illuminated and unilluminated samples. Experimental results are interpreted assuming the mixed valence of Ga in lead telluride and the formation of centers with negative correlation energy. For both, p-type (N_(Ga) = 0.1 and 0.2 at. percent) and n-type samples (N_(Ga) = 0.4 at. percent) the Fermi level is in the forbiden band, but for n-type illuminated sample the Fermi level is in the conduction band at low temperature. Positions and concentrations of different Ga impurity states are obtained using the Gibbs distribution.
机译：在30-500 cm〜（-1）光谱范围内，在不同温度下测量了PbTe（Ga）（N_（Ga）= 0.1、0.2和0.4 at。％）合金的远红外反射光谱，并使用基于等离振子-声子相互作用模型的数值拟合程序。观察到在120、150和220 cm〜（-1）处的三个局部Ga模式以及强等离激元-声子耦合。利用电磁测量的结果，可以确定受照样品和未受照样品的载流子浓度和费米能级温度依赖性。假设Ga在碲化铅中的混合价和具有负相关能的中心的形成，解释了实验结果。对于p型（N_（Ga）= 0.1和0.2 at。％）和n型样品（N_（Ga）= 0.4 at。％）而言，费米能级都在禁带内，但对于n型照明样品费米能级在低温下处于导带中。使用吉布斯分布获得不同的Ga杂质态的位置和浓度。

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