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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Electrical conductivity and optical absorption of (Ge_2S_3)_1(Sb_2Te_3)_1 amorphous thin films
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Electrical conductivity and optical absorption of (Ge_2S_3)_1(Sb_2Te_3)_1 amorphous thin films

机译：（Ge_2S_3）_1（Sb_2Te_3）_1非晶薄膜的电导率和光吸收

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摘要

An investigation of the electrical and optical properties of vacuum evaporated (Ge_2S_3)_1(Sb_2Te_3)_1 thin films has been carried out as a function of the film thickness (118.9-200 nm) and annealing temperatures (373, 423, and 473 K). The structure of the films was characterized by X-ray diffraction (XRD) which revealed the formation of amorphous films. The electrical conductivity was measured in the temperature range (290-383 K). The effect of the thickness and heat treatment on the activation energy (DELTA E) for the dc conductivity and density of the localized states at Fermi level N(E_F) were studied. The electrical conductivity measurements were found to be dependant on the film thickness and annealing temperature, and exhibit two types of conduction channels that contribute two conduction mechanisms. Optical absorption measurements showed that the fundamental absorption edge is a function of annealing temperatures and the optical absorption is due to the allowed indirect transition. The optical energy gap (E_(opt)) decreases with increasing thickness and annealing temperatures below T_g. The results are interpreted in terms of the density of state model proposed by Mott and Davis.
机译：已经研究了真空蒸镀（Ge_2S_3）_1（Sb_2Te_3）_1薄膜的电学和光学特性，该薄膜是膜厚（118.9-200 nm）和退火温度（373、423和473 K）的函数。膜的结构通过X射线衍射（XRD）表征，其揭示了非晶膜的形成。在温度范围（290-383 K）下测量电导率。研究了厚度和热处理对费米能级N（E_F）的直流电导率和局域态密度的活化能（DELTA E）的影响。发现电导率测量值取决于薄膜厚度和退火温度，并显示出两种有助于两种传导机制的传导通道。光吸收测量表明，基本吸收边缘是退火温度的函数，而光吸收是由于允许的间接跃迁引起的。光学能隙（E_（opt））随着厚度的增加和低于T_g的退火温度而减小。根据Mott和Davis提出的状态模型密度来解释结果。

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