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首页> 外文期刊>Physica, B. Condensed Matter >Optical absorption and electrical conductivity of amorphous AsTeGe thin films
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Optical absorption and electrical conductivity of amorphous AsTeGe thin films

机译：非晶态AsTeGe薄膜的光吸收和电导率

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Optical absorption measurements have been made on As46Te46Ge8 amorphous films with thickness 85-125 nm. The measurements were carried on as-prepared and annealed specimens. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E-O) increases with increasing the annealing temperature up to 473 K, followed by a sharp decrease with increasing the annealing temperature above the glass transition temperature. Electrical conductivity was measured in the temperature range 80-300 K. The effect of heat treatment on the activation energy (Delta E) for conduction and the density of localized states at the Fermi level N(E-F) was studied. The electrical measurements show annealing-dependent conductivity and exhibit two types of conduction channels that contribute two conduction mechanisms. Transmission electron microscope (TEM) investigation indicates the separation of crystalline phases after annealing at temperatures higher than 473 K. The results were discussed on the basis of amorphous-crystalline transformation. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 23]
机译：已经在厚度为85-125nm的As46Te46Ge8非晶膜上进行了光吸收测量。测量是在准备好的和退火的样品上进行的。光吸收的机理遵循非直接跃迁的规则。光学能隙（E-O）随退火温度升高至473 K而增加，随后随退火温度升高至玻璃化转变温度以上而急剧下降。在80-300 K的温度范围内测量了电导率。研究了热处理对激活能（Delta E）的传​​导和费米能级N（E-F）处的局部态密度的影响。电学测量结果显示出与退火有关的电导率，并显示出两种类型的导电通道，它们贡献了两种导电机理。透射电子显微镜（TEM）研究表明，在高于473 K的温度下退火后，结晶相分离。在非晶-晶体转变的基础上讨论了结果。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：23]

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