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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Improvement in high-Tc phase formation in (thallium-antimony) doped bismuth-based superconducting materials
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Improvement in high-Tc phase formation in (thallium-antimony) doped bismuth-based superconducting materials

机译：（th-锑）掺杂铋基超导材料中高Tc相形成的改进

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摘要

Doping of a combination of Tl_(0.3-x)Sb_x is found to promote the formation of high-Tc (Bi-2223) superconducting phase in Bi_(1.7)Pb_(0.4)Sr_2Ca_2Cu_3O_y compound which consequently results in enhancement of the critical temperatures, i.e. Tc_(0) and Tc~(onset). The structural information about the samples is retrieved through powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) whereas the critical temperature are determined through measurement of electrical resistivity and magnetic susceptibility. Various proportions of both the high-Tc (Bi-2223) and the low-Tc (Bi-2212) phases are present in the synthesized samples. However, the sample containing a dopant content x = 0.06 exhibits comparatively the lowest value of the DELTA T= 5 K and the highest content (82.5 percent) of the high-Tc phase and zero resistivity critical temperature Tc_(0) = 109 K.
机译：发现掺入Tl_（0.3-x）Sb_x的组合可促进Bi_（1.7）Pb_（0.4）Sr_2Ca_2Cu_3O_y化合物中高Tc（Bi-2223）超导相的形成，从而导致临界温度的提高，即Tc_（0）和Tc〜（set）。通过粉末X射线衍射（XRD）和扫描电子显微镜（SEM）检索有关样品的结构信息，而通过测量电阻率和磁化率确定临界温度。合成样品中存在各种比例的高Tc（Bi-2223）和低Tc（Bi-2212）相。但是，包含掺杂剂含量x = 0.06的样品的DELTA T = 5 K值最低，而高Tc相含量最高（82.5％），零电阻率临界温度Tc_（0）= 109K。

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