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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Low-temperature synthesis and characterization of the single chalcopyrite phase CuInS_2 compound by vacuum sintering method
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Low-temperature synthesis and characterization of the single chalcopyrite phase CuInS_2 compound by vacuum sintering method

机译：真空烧结法低温合成黄铜矿单相CuInS_2化合物及其表征

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摘要

We report herein low-temperature synthesis and characterization of the single chalcopyrite phase CuInS_2 compound by vacuum sintering method. In this study, the ball-milled precursors including copper, indium, and sulfur powders were sintered under vacuum at various temperatures ranging from 423 K to 823 K. The product sintered at 523 K showed the phases of CuInS_2, Cu_xS and CuIn_(11)S_(17), and the products sintered above 623 K were identified as the single chalcopyrite phase and close to stoichiometry by X-ray diffraction, Raman scattering and energy dispersive X-ray spectroscopy. The band gap value of the CuInS_2 compound was estimated as about 1.53 eV by optical transmittance and reflectance spectra, which is close to the ideal band gap for photovoltaic devices.
机译：我们在这里报道了通过真空烧结法的黄铜矿单相CuInS_2化合物的低温合成和表征。在这项研究中，包括铜，铟和硫粉在内的球磨前体在真空下于423 K至823 K的各种温度下烧结。在523 K烧结的产物显示出CuInS_2，Cu_xS和CuIn_（11）的相。 S_（17）和在623 K以上烧结的产物被鉴定为单一黄铜矿相，并且通过X射线衍射，拉曼散射和能量色散X射线光谱法接近化学计量。通过光透射率和反射光谱估计CuInS_2化合物的带隙值约为1.53eV，其接近光伏器件的理想带隙。

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