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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Dielectric properties of high permittivity ceramics based on Dy_(2/3)CuTa_4O_(12)
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Dielectric properties of high permittivity ceramics based on Dy_(2/3)CuTa_4O_(12)

机译：基于Dy_（2/3）CuTa_4O_（12）的高介电常数陶瓷的介电性能

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摘要

The paper reports on the dielectric properties of Dy_(2/3)CuTa_4O_(12) ceramic-a new material exhibiting very high permittivity exceeding 10~4 at low frequencies and broad steps in the permittivity versus temperature plots. Impedance spectroscopy studies performed in a frequency range 10 Hz to 2 MHz and within a temperature range from -160 to 650°C revealed two distinct contributions in impedance and electric modulus formalisms, which were attributed to semiconducting grains and more resistive grain boundaries. Two plateaus of about 40,000 and 50 were found in the real part of the permittivity versus frequency plots. Resistances and capacitances of grains, estimated on the basis of the impedance data, are 1.5-2 orders and about 400 times, respectively, lower than those of grain boundaries. The influence of sintering temperature within a range 1180-1250 °C on the dielectric properties and the microstructure of the ceramics was also investigated. The permittivity values were found to increase significantly with increasing sintering temperature. The observed high dielectric constant behavior was explained in terms of Maxwell-Wagner polarization related to internal (grain boundary) barrier layer capacitance effects.
机译：该论文报道了Dy_（2/3）CuTa_4O_（12）陶瓷的介电性能-一种新型材料，其在低频下的介电常数非常高，超过10〜4，并且介电常数与温度的关系曲线宽泛。在10 Hz至2 MHz的频率范围内以及-160至650°C的温度范围内进行的阻抗谱研究表明，在阻抗和电模量形式上有两个不同的贡献，这归因于半导体晶粒和更具电阻性的晶界。在介电常数与频率关系图的实部中发现了大约40,000和50的两个平台。根据阻抗数据估算的晶粒电阻和电容分别比晶界电阻低1.5-2倍和约400倍。还研究了1180-1250°C范围内的烧结温度对陶瓷介电性能和微观结构的影响。发现介电常数值随着烧结温度的增加而显着增加。用与内部（晶粒边界）势垒层电容效应有关的麦克斯韦-瓦格纳极化解释了观察到的高介电常数行为。

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