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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Structure and electrical properties of BiFeO_3 thin films grown on LaNiO_3 electrode by chemical solution deposition
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Structure and electrical properties of BiFeO_3 thin films grown on LaNiO_3 electrode by chemical solution deposition

机译：化学溶液沉积在LaNiO_3电极上生长的BiFeO_3薄膜的结构和电性能

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摘要

BiFeO_3 thin films were prepared on LaNiO_3 (LNO)-electrodized thermally oxidized silicon substrate by chemical solution deposition method. X-ray diffraction analysis revealed that the wellcrystallized BiFeO_3 thin films were obtained with no impurity phases. The resultant BiFeO_3 thin films were provided with the dense and uniform surface morphology. The dielectric constant and dielectric loss at 10 kHz of BiFeO_3 thin film on LNO electrode were 202 and 0.057, respectively. Large double remanent polarization of 90.9μC/cm~2 was observed. Furthermore, the trap-controlled space charge limited conduction mechanisms of the leakage current behavior of BiFeO_3 films on LNO electrode was suggested.
机译：采用化学溶液沉积法在LaNiO_3（LNO）电热氧化硅衬底上制备了BiFeO_3薄膜。 X射线衍射分析表明，获得了结晶良好的BiFeO_3薄膜，没有杂质相。所得的BiFeO_3薄膜具有致密且均匀的表面形态。 LNO电极上BiFeO_3薄膜在10 kHz时的介电常数和介电损耗分别为202和0.057。观察到大的双剩余极化为90.9μC/ cm〜2。并提出了陷阱控制的空间电荷限制了LNO电极上BiFeO_3薄膜漏电流行为的传导机制。

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