Preparation of Fe-doped semiconductor NiZrSn

Fangfang Wang; Tadashi Fukuhara; Kunihiko Maezawa

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Preparation of Fe-doped semiconductor NiZrSn

机译：掺铁半导体NiZrSn的制备

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Fe-doped NiZrSn polycrystalline ingots were prepared using arc melting method. Microstructure and electrical properties of the ingots were investigated. According to the EDX results, the solubility of Fe in the C1_b phase of the NiZrSn is about 2% by arc melting method. The electrical resistivity of low Fe-doped NiZrSn shows semiconducting temperature dependence and the transport gap estimated from activation plot is about 80 meV.

机译：采用电弧熔化法制备了Fe掺杂的NiZrSn多晶锭。研究了铸锭的组织和电性能。根据EDX结果，通过电弧熔化法，Fe在NiZrSn的Cl_b相中的溶解度约为2％。低Fe掺杂NiZrSn的电阻率显示出半导体温度依赖性，并且根据激活曲线估算的传输间隙约为80 meV。

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《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》 |2010年第2期|共4页
作者
Fangfang Wang; Tadashi Fukuhara; Kunihiko Maezawa;
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正文语种 eng
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Spintronics; Half-Heusler compound; Dilute magnetic semiconductor; Electrical resistivity;

机译：自旋电子学;半霍斯勒化合物;稀磁半导体;电阻率;

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机译：掺铁半导体NiZrSn的制备
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Preparation of Fe-doped semiconductor NiZrSn

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