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Analysis of deuterium in V-Fe5at.% film by atom probe tomography (APT)

机译:原子探针层析成像(APT)分析V-Fe5at。%薄膜中的氘

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摘要

V-Fe5at.% 2 and 10-nm thick single layered films were prepared by ion beam sputtering on W substrate. They were loaded with D from gas phase at 0.2 Pa and at 1 Pa, respectively. Both lateral and depth D distribution of these films was investigated in detail by atom probe tomography. The results of analysis are in good agreement between the average deuterium concentration and the value, expected from electromotive force measurement on a similar flat film. An enrichment of deuterium at the V/W interface was observed for both films. The origin of this D-accumulation was discussed in respect to electron transfer, mechanical stress and misfit dislocations.
机译:通过离子束溅射在W基板上制备V-Fe5at。%2和10-nm厚的单层膜。它们分别从气相以0.2 Pa和1 Pa加载D。这些膜的横向和深度D分布都通过原子探针层析成像技术进行了详细研究。分析的结果在平均氘浓度和由类似平板上的电动势测量所预期的值之间有很好的一致性。两种膜均在V / W界面处观察到氘的富集。关于电子转移,机械应力和失配位错,讨论了这种D积累的起源。

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