• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Ru incorporation on marked enhancement of diffusion resistance of multi-component alloy barrier layers
【24h】

Ru incorporation on marked enhancement of diffusion resistance of multi-component alloy barrier layers

机译：掺Ru可显着提高多组分合金阻挡层的扩散阻力

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this study, amorphous AlCrTaTiZr quinary alloy and 20 at.% Ru-incorporated AlCrTaTiZrRu senary alloy films were developed as diffusion barrier layers to inhibit Cu diffusion in interconnect structures. Under annealing at 700 °C, the interdiffusion of Cu and Si through the AlCrTaTiZr quinary alloy layer of 50 nm thick occurred, and compounds including Cu_3Si consequently formed. In comparison, at 800 °C, the interdiffusion was still effectively retarded by the Ru-incorporated AlCrTaTiZrRu senary alloy layer of only 5 nm thick without obvious formation of silicides. It suggests the high diffusion resistance of the Ru-incorporated barrier layer possibly attributed to the large lattice distortions caused by the addition of extra-large-sized Ru atoms.
机译：在这项研究中，无定形的AlCrTaTiZr五元合金和掺有20 at。％Ru的AlCrTaTiZrRu Senary合金膜被用作扩散阻挡层，以抑制Cu在互连结构中的扩散。在700℃下进行退火时，Cu和Si通过50nm厚的AlCrTaTiZr五元合金层发生相互扩散，因此形成包括Cu_3Si的化合物。相比之下，在800°C时，Ru掺入的AlCrTaTiZrRu senary合金层厚度仅为5 nm，仍然有效地阻止了相互扩散，而没有明显的硅化物形成。这表明掺Ru的阻挡层的高抗扩散性可能归因于因添加超大尺寸Ru原子而引起的大晶格畸变。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号