AC conductivity and dielectric properties of GeSe_xTl_(0.3) amorphous thin films

E. Abd El-Wahabb; M.M. Abd El-Aziz; E.R. Sharaf

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AC conductivity and dielectric properties of GeSe_xTl_(0.3) amorphous thin films

机译：GeSe_xTl_（0.3）非晶薄膜的交流电导率和介电性能

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AC conductivity and dielectric properties have been studied for amorphous thin films with different thicknesses of glassy system GeSe_xTl_(0.3) with X=3,4 that prepared with thermal evaporation technique. The measurements are taken at temperature range (303-403 K) and frequency range (10~2-10~5 Hz). AC conductivity sigma_(ac)(omega) is found to be proportional to

机译：研究了采用热蒸发技术制备的不同厚度的玻璃态GeSe_xTl_（0.3），X = 3,4的非晶态薄膜的交流电导率和介电性能。在温度范围（303-403 K）和频率范围（10〜2-10〜5 Hz）下进行测量。发现交流电导率sigma_（ac）Ω与

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《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》 |2011年第34期|共6页
作者
E. Abd El-Wahabb; M.M. Abd El-Aziz; E.R. Sharaf;
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正文语种 eng
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AC conductivity; Dielectric properties;

机译：交流电导率;介电性能;

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1. AC conductivity and dielectric properties of GeSe_xTl_(0.3) amorphous thin films [J] . E. Abd El-Wahabb, M.M. Abd El-Aziz, E.R. Sharaf Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2011,第34期

机译：GeSe_xTl_（0.3）非晶薄膜的交流电导率和介电性能
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AC conductivity and dielectric properties of GeSe_xTl_(0.3) amorphous thin films

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