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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Investigation of switching phenomenon of Se_(75)Te_(25-x)Ga_x amorphous system
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Investigation of switching phenomenon of Se_(75)Te_(25-x)Ga_x amorphous system

机译：Se_（75）Te_（25-x）Ga_x非晶态系统的开关现象研究

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摘要

Thin film samples of different thicknesses ranging from 185 to 630 nm, were prepared from the synthesized amorphous Se_(75)Te_(25-x)Ga_x (0 <= x <= 15 at.%) chalcogenide glass compositions by thermal evaporation technique. X-ray analysis showed that the amorphous nature of the obtained films. Investigations of the current-voltage (f-V) characteristics of amorphous films are typical for a memory type switch. The conduction activation energy (ΔE_σa) was calculated from the temperature dependence of the sample resistance of the studied films in the temperature range (293-333 K) below the glass transition temperature. The mean value of the threshold switching voltage V_(th) increases linearly with increasing film thickness and decreases exponentially with temperature (below T_g) for all investigated compositions. The threshold voltage activation energy ε_(th) was calculated from the temperature dependence of V_(th) of the studied films. The switching phenomenon observed in these films is explained in accordance with the electrothermal model for the switching process. The effect of Ga content on the studied parameters was also investigated.
机译：通过热蒸发技术由合成的非晶态Se_（75）Te_（25-x）Ga_x（0≤x≤15at。％）硫属元素化物玻璃组合物制备了185至630nm范围内的不同厚度的薄膜样品。 X射线分析表明，所得薄膜具有非晶性。对于存储型开关，非晶膜电流-电压（f-V）特性的研究是典型的。导电活化能（ΔE_σa）由所研究薄膜的样品电阻在低于玻璃化转变温度的温度范围（293-333 K）中的温度依赖性计算得出。对于所有研究的组合物，阈值开关电压V_（th）的平均值随着膜厚度的增加线性增加，并随温度（低于T_g）呈指数下降。从研究膜的V_（th）的温度依赖性算出阈值电压活化能ε_（th）。这些薄膜中观察到的开关现象根据开关过程的电热模型进行了解释。还研究了Ga含量对所研究参数的影响。

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