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Preparation and characterisation of PZT films by RF-magnetron sputtering

机译:磁控溅射法制备PZT薄膜及其表征

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摘要

Stoichiometric films were prepared by rf-magnetron sputtering from a Pb(Zr_(0.54)Ti_(0.46))O_3 ceramic target onto Au-electroded substrates of alumina. During deposition the substrate holder was kept at a temperature of 300 °C. Post-deposition heat treatment in air at 650 °C was carried to promote the full crystallization and to result in pure perovskite PZT phase. SEM-EDX measurements for the films were performed both on surface and on cross-section. The impedance spectroscopy data demonstrates that the films have rather good dielectric properties and low losses. The recorded P-E loops prove their macroscopic ferroelectric characteristics, while piezoresponse force microscopy experiments confirm a nanoscale switching mechanism based on domain nucleation-growth.
机译:通过射频磁控溅射从Pb(Zr_(0.54)Ti_(0.46))O_3陶瓷靶材到Au电镀的氧化铝基底上制备化学计量膜。在沉积期间,将衬底支架保持在300℃的温度。在空气中于650°C进行沉积后热处理,以促进完全结晶并产生纯钙钛矿PZT相。膜的SEM-EDX测量是在表面和横截面上进行的。阻抗谱数据表明该膜具有相当好的介电性能和低损耗。记录的P-E环证明了其宏观铁电特性,而压电响应力显微镜实验证实了基于畴成核-生长的纳米级转换机制。

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