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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y_2O_3 films
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Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y_2O_3 films

机译：溅射压力和金属化后退火对射频溅射Y_2O_3薄膜物理性能的影响

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摘要

Y_2O_3 thin films were prepared by rf-sputtering under various sputtering pressures at room temperature. Spectroscopic ellipsometer, X-ray diffraction and semiconductor parameter analyzer were used to characterize the studied films. The results show the crystallinity and leakage current density of the films improved with decreasing sputtering pressure. The effects of post-metallization annealing (PMA) on optical, structural and electrical properties of the films were also evaluated. It is found that PMA can significantly enhance the electrical performance of Y_2O_3 film, and the lowest leakage current is found to be 1.54 X 10~(-8) A/cm~2 at 1 MV/cm for the samples treated at 350°C for 30min. The leakage current mechanisms were discussed as well, which reveals that space charge limited current dominates the as-deposited films while Schottky mechanism describes the PMA treated ones well.
机译：通过在室温下在各种溅射压力下进行rf溅射来制备Y_2O_3薄膜。使用光谱椭圆偏振仪，X射线衍射仪和半导体参数分析仪来表征所研究的薄膜。结果表明，随着溅射压力的降低，薄膜的结晶度和漏电流密度提高。还评估了后金属化退火（PMA）对薄膜的光学，结构和电性能的影响。结果表明，PMA可以显着提高Y_2O_3薄膜的电性能，在350℃下处理的样品在1 MV / cm下的最低漏电流为1.54 X 10〜（-8）A / cm〜2 30分钟。还讨论了漏电流机制，这表明空间电荷限制电流在沉积的薄膜中起主导作用，而肖特基机制很好地描述了PMA处理过的薄膜。

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