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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Structural, optical and electrical properties of CuIn_5S_8 thin films grown by thermal evaporation method
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Structural, optical and electrical properties of CuIn_5S_8 thin films grown by thermal evaporation method

机译：热蒸发法生长CuIn_5S_8薄膜的结构，光电性能

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摘要

Stoichiometric compound of copper indium sulfur (CuInsSg) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn_5S_8 were deposited onto glass substrates under the pressure of 10~(-6) Torr using thermal evaporation technique. CuIn_5S_8 thin films were then thermally annealed in air from 100 to 300 °C for 2h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn_5S_8 thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (311) plane after the annealing at 200 °C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10~4 cm~(-1) was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 °C. It was found that CuIn_5S_8 thin film is an n-type semiconductor at 300 °C.
机译：铜铟硫的化学计量化合物（CuInsSg）是通过在真空石英管中使高纯度元素铜，铟和硫直接反应合成的。合成材料的相结构显示出立方尖晶石结构。单晶的晶格参数（a）经计算为10.667A。使用热蒸发技术在10〜（-6）Torr的压力下将CuIn_5S_8薄膜沉积到玻璃基板上。然后将CuIn_5S_8薄膜在100至300°C的空气中热退火2小时。利用X射线衍射（XRD），能量色散X射线能谱（EDX），扫描电子显微镜（SEM），光学透射和热探针法研究了热退火对其理化性质的影响。 CuIn_5S_8薄膜的XRD研究表明，沉积后的薄膜在本质上是非晶态的，并在200°C退火后转变为多晶尖晶石结构，并沿（311）面具有较好的择优取向。该组成受热处理的影响很大。从光的透射和反射，发现重要的吸收系数超过10〜4 cm〜（-1）。随着退火温度的升高，在300°C时，光能带隙从沉积薄膜的1.83 eV降低到退火薄膜的1.43 eV。发现CuIn_5S_8薄膜是在​​300℃下的n型半导体。

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