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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Elaboration and characterization of Al doped ZnO nanorod thin films annealed in hydrogen
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Elaboration and characterization of Al doped ZnO nanorod thin films annealed in hydrogen

机译：氢退火Al掺杂ZnO纳米棒薄膜的制备与表征

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摘要

ZnO thin films doped with Al concentrations of 1.0, 2.0, 3.0, 4.0, 5.0 at% were prepared by a sol-gel spin-coating method on glass substrates and respectively annealed at 550 °C for 2 h in hydrogen and air. The X-ray diffraction and selected-area electron diffraction results confirm that the Al doped ZnO thin films are of wurtzite hexagonal ZnO. The scanning electron microscope results indicate that the Al doped ZnO nanorod thin films can be got by annealing in hydrogen rather than in air. The optical properties reveal that the Al doped ZnO thin films have obviously enhanced transmittance in the visible region. The electrical properties show that the resistivity of 1.0 at% Al doped ZnO thin films has been remarkably reduced from 0.73 Ω m by annealing in air to 3.2 x 10~(-5) Ω m by annealing in hydrogen. It is originated that the Al doped ZnO nanorod thin films annealed in hydrogen increased in electron concentration and mobility due to the elimination of adsorbed oxygen species, and multicoordinated hydrogen.
机译：通过溶胶-凝胶旋涂法在玻璃基板上制备Al掺杂浓度为1.0、2.0、3.0、4.0、5.0 at％的ZnO薄膜，分别在550°C的氢气和空气中退火2 h。 X射线衍射和选择区域电子衍射结果证实了Al掺杂的ZnO薄膜是纤锌矿型六方ZnO。扫描电子显微镜结果表明，Al掺杂的ZnO纳米棒薄膜可以在氢气中而不是在空气中退火得到。光学性质表明，掺杂Al的ZnO薄膜在可见光区具有明显增强的透射率。电学性能表明，掺杂1.0％铝的ZnO薄膜的电阻率已通过在空气中退火从0.73Ωm显着降低到在氢中退火的3.2 x 10〜（-5）Ωm。可以认为，由于消除了吸附的氧种类和多配位氢，使在氢中退火的Al掺杂的ZnO纳米棒薄膜的电子浓度和迁移率提高。

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