Nanostmctural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

Zhan-Shuo Hu; Fei-Yi Hung; Shoou-Jinn Chang

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Nanostmctural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

机译：碘镓离子刻蚀氧化帽GaN纳米尖端的纳米结构特征

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GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top.

机译：借助双掩模氧化银（AgO）和氧化镓（GaO），通过碘辅助增强聚焦离子束蚀刻（IFIBE）制备GaN纳米尖端阵列。 AgO的功能用于防止GaO的消除，从而将GaO保留在GaN纳米尖端上。不同大小的银团簇能够通过双掩膜工艺（AgO和GaO）协助形成GaN纳米尖端。经过IFEBE工艺后，银掩膜消失了，仅在顶部留有多晶结构的氧化镓。

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《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》 |2011年第5期|共4页
作者
Zhan-Shuo Hu; Fei-Yi Hung; Shoou-Jinn Chang;
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正文语种 eng
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Gallium nitride; Ag; Iodine-gallium ions etching;

机译：氮化镓;银;碘镓离子刻蚀;

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1. Nanostmctural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching [J] . Zhan-Shuo Hu, Fei-Yi Hung, Shoou-Jinn Chang Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2011,第5期

机译：碘镓离子刻蚀氧化帽GaN纳米尖端的纳米结构特征
2. The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl_2/SiCl_4/Ar plasma [J] . Rui Li, Tao Dai, Ling Zhu, Journal of Crystal Growth . 2007,第Jan期

机译：Cl_2 / SiCl_4 / Ar等离子体对AlGaN / GaN SLs的反应离子刻蚀特性及n-GaN的刻蚀损伤研究
3. Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching [J] . Anna Haab, Martin Mikulics, Eli Sutter, Nanotechnology . 2014,第25期

机译：通过无掩模反应离子刻蚀生产的GaN纳米线的演变和特性
4. Improved characteristics of reactive-ion-etching damage for n-GaN epitaxial layers after post-etch treatments [C] . Chang, J.Y., Hong, . 2003

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Nanostmctural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

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