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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Magnetic behavior in arrays of Ni_(79)Fe_(21) and Ni_(79)Fe__(21)/Cu nanowires
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Magnetic behavior in arrays of Ni_(79)Fe_(21) and Ni_(79)Fe__(21)/Cu nanowires

机译：Ni_（79）Fe_（21）和Ni_（79）Fe __（21）/ Cu纳米线阵列中的磁行为

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摘要

Ordered hexagonal arrays of NiFe homogeneous nanowires and NiFe/Cu multilayer nanowires were fabricated by electrodeposition into alumina membranes with pore diameter about 70 nm and 35 nm and 105 nm interpore distance, with a NiFe nanodisc thickness of 60 and 70 nm, and a Cu thickness of 50 and 10nm.The hysteresis loops were measured with the applied magnetic field parallel and perpendicular to the wire axis using a VSM. The homogeneous NiFe nanowire array exhibits a nearly isotropic magnetic behavior. In the multilayer nanowire arrays of 70 nm diameter, the preferential direction of magnetization is perpendicular to the wire axis and the measured coercive field decreases as the t_(Cu)/t_(NiFe) increases. The magnetization processes in multilayer nanowire arrays of 70 nm diameter have been investigated by means of micromagnetic simulations of isolated, 2 and up to 9, wires. The magnetization distributions for the two 21(NiFe60/Cu50) and 21(NiFe70/Cul0) multilayer nanowire arrays of 70 nm diameter, with the applied magnetic field in the wire axis direction, indicate that magnetizati on occurs by vortex nucleation at the ends in all the wire nanodiscs. For the samples of the same composition mentioned above, but of 35 nm diameter, the reversal magnetization starts by nucleation of a domain wall. A random orientation of the magnetization in the different nanodiscs for the sample of 21 (NiFe60/Cu50) can be observed.
机译：通过电沉积到孔径约70 nm，35 nm和105 nm孔距，NiFe纳米圆片厚度分别为60和70 nm以及Cu厚度的氧化铝膜中，制备出NiFe均质纳米线和NiFe / Cu多层纳米线的有序六角阵列磁滞回线的测量范围是50和10nm。均匀的NiFe纳米线阵列表现出几乎各向同性的磁行为。在直径为70 nm的多层纳米线阵列中，磁化的优先方向垂直于线轴，并且随着t_（Cu）/ t_（NiFe）的增加，测得的矫顽场减小。已经通过隔离的2根和9根以内的线的微磁模拟研究了直径70 nm的多层纳米线阵列中的磁化过程。直径为70 nm的两个21（NiFe60 / Cu50）和21（NiFe70 / Cul0）多层纳米线阵列的磁化分布，在线轴方向上施加磁场，表明磁化发生于磁芯末端的涡旋形核。所有的线纳米光盘。对于具有上述相同组成但直径为35 nm的样品，反向磁化通过畴壁的形核开始。可以观察到样品21（NiFe60 / Cu50）在不同的纳米圆盘中的磁化强度的随机方向。

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