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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films
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On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films

机译：关于六方稀土（Y，Gd，Dy，Er和Yb）二硅化物薄膜的形成和结构性质

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摘要

A systematic study was performed of the solid state reaction between a 100 nm thick layer of a rare earth metal and a Si substrate. The solid state reaction of five different rare earth metals (yttrium, gadolinium, dysprosium, erbium and ytterbium) were studied by in situ X-ray diffraction measurements on Si(100), Si(111) and poly-Si. This allowed us to make a comparison between the different systems. The formation temperature of h-RESi1.7 are the highest on Si(111) and the lowest on poly-Si for all examined RE metals. Additionally, the texture of the Gd disilicide phase on Si(100) and Si(111) was investigated by means of ex situ pole figure measurements. The epitaxial relationship of hexagonal GdSi1.7 and orthorhombic GdSi2 on the different Si substrates is determined. The epitaxial growth is the strongest on Si(111). (C) 2014 Elsevier B. V. All rights reserved.
机译：对100 nm厚的稀土金属层和Si衬底之间的固态反应进行了系统的研究。通过在Si（100），Si（111）和多晶硅上进行原位X射线衍射测量，研究了五种不同的稀土金属（钇，g 、,、和）的固态反应。这使我们可以在不同系统之间进行比较。对于所有检查过的稀土金属，h-RESi1.7的形成温度在Si（111）上最高，而在多晶硅上最低。此外，还通过异位极图测量研究了Si（100）和Si（111）上的Gd二硅化物相的织构。确定了六方GdSi1.7和正交GdSi2在不同Si衬底上的外延关系。外延生长在Si（111）上最强。 （C）2014 Elsevier B. V.保留所有权利。

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