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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Diluted magnetic semiconductors based on Mn-doped In_2O_3 nanoparticles
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Diluted magnetic semiconductors based on Mn-doped In_2O_3 nanoparticles

机译：基于Mn掺杂In_2O_3纳米粒子的稀磁半导体

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摘要

Here we report a novel pathway for the synthesis of Indium oxide and Mn(III)-doped indium oxide nanoparticles (NPs) from mechanochemical activation in absence of basic medium. Nps ~8 nm were obtained after annealing the powder precursor in air at 400℃ for 1 h. X-ray diffraction (XRD) analysis and high resolution transmission electron microscopy (HR-TEM) reveal that the Nps are single-phase cubic structure of In_2O_3. Fourier transform infrared spectroscopy (FTIR), Raman, and ultraviolet-visible (UV-vis) spectra suggest the In(III) substitution by Mn(III). Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectra show clear evidence of paramagnetic centers as oxygen and indium defects. This synthesis pathway is particularly suitable for large-scale and high-quality of semiconductor metallic oxide nanoparticles production due to its simple process and low cost.
机译：在这里，我们报告了一种在不存在碱性介质的情况下通过机械化学活化合成氧化铟和Mn（III）掺杂的氧化铟纳米颗粒（NPs）的新途径。将粉末前驱体在空气中于400℃退火1小时后，获得Nps〜8 nm。 X射线衍射（XRD）分析和高分辨率透射电子显微镜（HR-TEM）表明，Nps是In_2O_3的单相立方结构。傅里叶变换红外光谱（FTIR），拉曼光谱和紫外可见（UV-vis）光谱表明In（III）被Mn（III）取代。光致发光（PL）和电子顺磁共振（EPR）光谱清楚显示出顺磁性中心为氧和铟缺陷。由于其简单的工艺和低成本，该合成途径特别适用于大规模和高质量的半导体金属氧化物纳米颗粒的生产。

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