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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip
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Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

机译：基于成分分级的CdSSe纳米线芯片的高灵敏度和宽带光谱响应的大面积光电探测器

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The nanowire-chip based large-area and broad-band-response photodetector was realized by integrating the ternary bandgap-graded CdS1-xSex nanowire-chip on proper substrate and optimizing electrode pattern. The actual light-to-dark current ratio (I-light/I-dark) is subject to the substrate type and the electrode pattern, as well the thickness of nanowires. Up to 106 light-to-dark current ratio was obtained for the nanowire-chip photodetector with the optimized interdigital electrode parameters (0.5 mm in width, 0.5 mm in pitch), the suitable substrate - mica and appropriate nanowire thickness (70um). Although the carriers transmit from light-generated carrier centers to the electrodes through a complicated and long pathway, the photodetector of as-fabricated nanowire-chip shows much higher photocurrent and photoconductivity due to a higher photocarrier densities exist in the ternary compounds than that in binary CdS and CdSe nanowire and the intersection trap state existing between nanowires enhances the separation of electrons and holes. Uniform and broad photoresponse covering from ultraviolet to around 700 nm is attributed to the graded bandgap of different composition nanowiresanobelts in the chip-type detector. Especially, the Ilight/Idark of nanowire-chip detector increases with the temperature decrease due to the dark noise and the scattering become lower. The chip detector with composition-graded nanowires shows good photoconductivity at room temperature and low temperature. More important, it can be fabricated by a commercial CVD route, which will satisfy the requirements in many application fields instead of Si-based detector. (C) 2015 Elsevier B.V. All rights reserved.
机译：通过将三级带隙渐变CdS1-xSex纳米线芯片集成在适当的基板上并优化电极图案，实现了基于纳米线芯片的大面积和宽带响应光电探测器。实际的明暗电流比（I-light / I-dark）取决于基板类型和电极图案以及纳米线的厚度。具有优化的叉指电极参数（宽度为0.5毫米，节距为0.5毫米），合适的基板-云母和合适的纳米线厚度（70um）的纳米线芯片光电探测器获得了高达106的明暗电流比。尽管载流子通过复杂而漫长的路径从光生载流子中心传输到电极，但是由于三元化合物中存在的载流子密度比二元化合物中的载流子密度高，因此制成的纳米线芯片的光电检测器显示出更高的光电流和光电导率。 CdS和CdSe纳米线以及纳米线之间存在的相交陷阱状态增强了电子和空穴的分离。从紫外线到700 nm左右的光响应范围均匀而宽泛，归因于芯片型检测器中不同组成的纳米线/纳米粒子的带隙梯度。特别地，由于暗噪声，纳米线芯片检测器的Ilight / Idark随着温度降低而增加，并且散射变低。具有成分分级纳米线的芯片检测器在室温和低温下显示出良好的光电导性。更重要的是，它可以通过商业化的CVD路线来制造，这将满足许多应用领域的需求，而不是基于Si的探测器。 （C）2015 Elsevier B.V.保留所有权利。

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