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Comparative first principles study of ZnO doped with group III elements

机译:掺杂III族元素的ZnO的比较第一性原理研究

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摘要

In this paper, we present a comparative study of structural, electronic, optical and electrical properties of ZnO doped with aluminum, gallium and indium. The calculated structural parameters were obtained using the Generalized Gradient Approximation. The influence of doping ZnO on growth directions was investigated. The electronic structure, absorption coefficient, reflectivity, refraction index, and transparency were determined using the modified BeckeeJohnson potential implemented in the Wien2K code. The electrical conductivity was calculated for all compounds using the Boltzmann transport equation. We have found that these elements present a good optical and electrical conductivity with a significant improvement for the ZnO doped Al compared to the ZnO doped Ga or In. The results for pure and doped ZnO are in a good agreement with experimental and other theoretical studies and confirm their usability in photovoltaic devices. (C) 2016 Published by Elsevier B.V.
机译:在本文中,我们对铝,镓和铟掺杂的ZnO的结构,电子,光学和电学性质进行了比较研究。计算的结构参数是使用广义梯度近似获得的。研究了掺杂ZnO对生长方向的影响。电子结构,吸收系数,反射率,折射率和透明度使用在Wien2K代码中实现的改良BeckeeJohnson电势确定。使用玻耳兹曼输运方程计算所有化合物的电导率。我们已经发现,与掺杂ZnO的Ga或In相比,这些元素具有良好的光学和导电性,并且对ZnO掺杂的Al有显着改善。纯和掺杂的ZnO的结果与实验和其他理论研究非常吻合,并证实了它们在光伏器件中的可用性。 (C)2016由Elsevier B.V.发布

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