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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature
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Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature

机译：p型GaN上Au / Yb肖特基接触的电学和结构性质随退火温度的变化

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摘要

The structural changes of Au/Yb contacts to p-type GaN were investigated using X-ray diffraction, X-ray photoemission spectroscopy, and atomic force microscopy as the annealing temperature was varied. The results were used to interpret the electrical properties of Au/Yb Schottky contacts to p-type GaN. A barrier height of 0.84 eV was obtained for the as-deposited Au/Yb/p-type GaN Schottky diode. An optimum barrier height of 1.03 eV was obtained for the 400 degrees C annealed Au/Yb/p-type GaN Schottky diode and the barrier height decreased after annealing at temperatures above 500 degrees C. Intermixing between the Au and Yb films occurred, implying an interfacial reaction between Au and Yb during deposition followed by a massive diffusion of Au towards GaN with increasing annealing temperature. The increase in the barrier height for the 400 degrees C annealed Au/Yb/p-type GaN contact could be associated with the formation of YbN phase, which creates nitrogen vacancies acting as donors in the vicinity of the metal/GaN interface region. The decrease in the barrier height after annealing at 500 and 600 degrees C could be due to the evolution of gallide phases, which generate Ga vacancies, leading to an increase in the net hole concentration near the metal/GaN interface. (C) 2016 Elsevier B.V. All rights reserved.
机译：使用X射线衍射，X射线光发射光谱和原子力显微镜研究了随着退火温度的变化，Au / Yb触点与p型GaN的结构变化。结果用于解释Au / Yb肖特基接触到p型GaN的电性能。对于沉积的Au / Yb / p型GaN肖特基二极管，势垒高度为0.84 eV。对于400摄氏度退火的Au / Yb / p型GaN肖特基二极管，最佳势垒高度为1.03 eV，并且在高于500摄氏度的温度下退火后，势垒高度降低。Au和Yb膜之间发生混合，这意味着沉积过程中Au和Yb之间的界面反应，然后随着退火温度的升高Au向GaN大量扩散。 400摄氏度退火的Au / Yb / p型GaN接触的势垒高度的增加可能与YbN相的形成有关，这会在金属/ GaN界面区域附近产生氮空位，作为施主。在500和600摄氏度下退火后，势垒高度的降低可能是由于形成了Ga空位的镓化物相的演变，导致金属/ GaN界面附近的净空穴浓度增加。 （C）2016 Elsevier B.V.保留所有权利。

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