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首页> 外文期刊>Journal of Materials Science >Studies on band-gap energy and valence-band splitting from photocurrent response of photoconductive CdGa2Se4 layers
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Studies on band-gap energy and valence-band splitting from photocurrent response of photoconductive CdGa2Se4 layers

机译：从光电导CdGa2Se4层的光电流响应研究带隙能和价带分裂

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摘要

The photoconductive cadmium gallium selenide (CdGa2Se4) layer was grown through the hot wall epitaxy method. From the photocurrent (PC) measurements, the three peaks in the PC spectra were associated with the band-to-band transitions. The PC intensities were observed to decrease with decreasing temperature. The valence-band splitting on CdGa2Se4 was also observed by means of the PC spectroscopy. The crystal field splitting and the spin orbit splitting turned out to be 0.1604 and 0.4179 eV at 10 K, respectively. The temperature dependence of the optical band gap on the CdGa2Se4 was estimated using the PC. The band-gap energy of CdGa2Se4 at room temperature was 2.5446 eV.
机译：通过热壁外延法生长光导硒化镓硒化镓（CdGa2Se4）层。根据光电流（PC）测量，PC光谱中的三个峰与带间跃迁相关。观察到PC强度随温度降低而降低。还通过PC光谱法观察到在CdGa 2 Se 4上的价带分裂。在10 K下，晶体场分裂和自旋轨道分裂分别为0.1604和0.4179 eV。使用PC估算了光学带隙对CdGa2Se4的温度依赖性。 CdGa2Se4在室温下的带隙能为2.5446 eV。

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