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首页> 外文期刊>Journal of Materials Science >Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films
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Microstructure and ionic conductivity of alternating-multilayer structured Gd-doped ceria and zirconia thin films

机译：多层掺杂G掺杂二氧化铈和氧化锆薄膜的微观结构和离子电导率

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摘要

Multilayer thin film of Gd-doped ceria and zirconia have been grown by sputter-deposition on alpha-Al2O3 (0001) substrates. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The Gd-doped ceria and zirconia layers had the fluorite structure and are highly textured such that the (111) plane of the films parallel to the (0001) plane of the alpha-Al2O3. The epitaxial relationship can be written as (111)(ZrO2/CeO)2//(0001)Al2O3 and [11-2](ZrO2/CeO2)// [-2110](Al2O3), respectively. The absence of Ce3+ features in the XPS spectra indicates that the Gd-doped ceria films are completely oxidized. The ionic conductivity of this structure shows great improvement as compared with that of the bulk crystalline material. This research provides insight on designing of material for low temperature electrolyte applications.
机译：通过在α-Al2O3（0001）衬底上进行溅射沉积，可以生长Gd掺杂的二氧化铈和氧化锆的多层薄膜。使用X射线衍射（XRD），原子力显微镜（AFM），X射线光电子能谱（XPS）和透射电子显微镜（TEM）对薄膜进行表征。掺Gd的二氧化铈和氧化锆层具有萤石结构，并且具有很高的纹理，以使薄膜的（111）平面平行于α-Al2O3的（0001）平面。外延关系可以分别写为（111）（ZrO2 / CeO）2 //（0001）Al2O3和[11-2]（ZrO2 / CeO2）// [-2110]（Al2O3）。 XPS光谱中没有Ce3 +特征，表明掺Gd的二氧化铈薄膜已被完全氧化。与本体晶体材料相比，该结构的离子电导率显示出很大的改善。这项研究为低温电解质应用的材料设计提供了见识。

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