Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications

Liu G. X.; Liu A.; Meng Y.; Shan F. K.; Shin B. C.; Lee W. J.; Cho C. R.

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Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications

机译：栅极电介质应用固溶处理的超薄ZrOx薄膜的退火依赖性

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Ultra-thin ZrOx thin films on Si substrates were prepared by sol-gel technique and processed with different methods (baked on hot plate at 150 degrees C, annealed at 500 degrees C in furnace, and photoannealed under UV light). The decomposition of the organic groups and the formation of Zr-O bonding in the ZrOx thin films were confirmed by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. It is found that the ZrOx thin film annealed under UV light shows decent characteristics, including an ultra-small surface roughness, a low leakage current density of 10(-9) A/cm(2) at 1 MV/cm, a large breakdown electric field of 9.5 MV/cm, and a large areal capacitance of 775 nF/cm(2).

机译：通过溶胶-凝胶技术在硅衬底上制备超薄ZrOx薄膜，并用不同的方法进行处理（在150摄氏度的热板上烘烤，在炉中于500摄氏度退火，并在紫外线下进行光退火）。 ZrOx薄膜中有机基团的分解和Zr-O键的形成已通过傅里叶变换红外光谱和X射线光电子能谱得以证实。发现在紫外线下退火的ZrOx薄膜表现出良好的特性，包括超小的表面粗糙度，在1 MV / cm的情况下低的漏电流密度10（-9）A / cm（2），大的击穿电场为9.5 MV / cm，面积电容为775 nF / cm（2）。

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《Journal of nanoscience and nanotechnology》 |2015年第3期|共7页
作者
Liu G. X.; Liu A.; Meng Y.; Shan F. K.; Shin B. C.; Lee W. J.; Cho C. R.;
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正文语种 eng
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关键词
ZrOx; Ultra-Thin Dielectric; UV Annealing;

机译：ZrOx;超薄介电;紫外退火;

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2. 退火和固溶处理对深冷轧1100铝合金力学性能和腐蚀性能的影响 [J] . S.A.ZAKARIA, A.S.ANASYIDA, H.ZUHAILAWATI, 中国有色金属学报：英文版 . 2021,第010期
3. 退火和固溶处理对深冷轧1100铝合金力学性能和腐蚀性能的影响 [J] . S.A.ZAKARIA, A.S.ANASYIDA, H.ZUHAILAWATI, 中国有色金属学报（英文版） . 2021,第010期
4. Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications [J] . Liu G. X., Liu A., Meng Y., Journal of nanoscience and nanotechnology . 2015,第3期

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5. Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors [J] . Islam Md Mobaidul, Saha Jewel Kumer, Bukke Ravindra Naik, IEEE Electron Device Letters . 2020,第7期

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6. Structure and dielectric properties of ultra-thin ZrO_2 films for high-k gate dielectric application prepared by pulsed laser deposition [J] . J. ZHU, Z.G. LIU Applied Physics. A, Materials Science & Processing . 2004,第5期

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Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications

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