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Enhanced mid-IR luminescence of Tm~(3+) ions in Ga _2S_3 nanocrystals embedded chalcohalide glass ceramics

机译:Ga _2S_3纳米晶体嵌入卤化物玻璃陶瓷中Tm〜(3+)离子的增强中红外发光

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摘要

Chalcohalide glass with a composition of 65GeS_2-25Ga _2S_3-10CsI (in mol%) doped with 0.6 wt% Tm~(3+) ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20°C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga _2S_3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of ~3H_4 → ~3H_5 and ~3H_5 → ~3F_4 of Tm~(3+) ions were significantly enhanced by the presence of Ga_2S_3 nanocrystals and reached a maximum after 8 hours treatment.
机译:采用常规的熔融淬火法制备了掺有0.6wt%的Tm〜(3+)离子的65GeS_2-25Ga_2S_3-10CsI(摩尔%)的卤化玻璃。通过在高于其玻璃化转变温度Tg的20°C下热处理前体玻璃不同的时间,可以获得IR透明玻璃陶瓷。 X射线衍射(XRD)和扫描电子显微镜(SEM)表明,Ga_2S_3晶粒经热处理后析出,晶粒尺寸为纳米级,并随着热处理时间的延长而增大。研究了玻璃和透明玻璃陶瓷样品的中红外发光特性。 Ga_2S_3纳米晶体的存在显着增强了与Tm〜(3+)离子的〜3H_4→〜3H_5和〜3H_5→〜3F_4的光学跃迁相对应的2.3和3.8μm处的发射,并在8小时的处理后达到最大值。

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