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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >A two-component model for the 2260 cm~(-1) infrared absorption band in electron irradiated amorphous SiO_2
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A two-component model for the 2260 cm~(-1) infrared absorption band in electron irradiated amorphous SiO_2

机译：电子辐照无定形SiO_2中2260 cm〜（-1）红外吸收带的双组分模型

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摘要

We report an experimental study by infrared absorption (IR) measurements focused on the effects of electron irradiation in the dose range from 1.2 × 10~3 kGy to 5 × 10~6 kGy on the intrinsic band peaked at 2260 cm~(-1) in amorphous silicon dioxide (a-SiO_2) materials. This IR band is particularly relevant as it is assigned to an overtone of the strong asymmetric stretching vibration of Si-O-Si bridges and consequently it is intimately related to the Si-O-Si bond angle distribution. In a recent work we have shown that structural modifications induced by irradiation take place through the nucleation of confined high-defective and densified regions statistically dispersed into the whole volume of the material [G. Buscarino et al., Phys. Rev. B 80 (2009) 094202]. Based on these results here we propose a two-component model to describe the IR band around 2260 cm~(-1) in irradiated materials: the former component is due to the Si-O-Si groups located in the portion of volume of the material with pristine structure, whereas the latter to those located into the portion of the material densified by irradiation. Our results indicate that this scheme actually allows a reliable quantitative description of the effects of electron irradiation on the IR spectra of a-SiO_2 and gives further support to the equivalence previously proposed between pressure- and radiation-induced compaction processes.
机译：我们报告了通过红外吸收（IR）测量进行的一项实验研究，该研究专注于电子辐射在1.2×10〜3 kGy到5×10〜6 kGy的剂量范围内对2260 cm〜（-1）峰值的本征带的影响。在无定形二氧化硅（a-SiO_2）材料中。该IR波段特别重要，因为它被赋予了Si-O-Si桥的强非对称拉伸振动的泛音，因此，它与Si-O-Si键角分布密切相关。在最近的工作中，我们显示了由辐照引起的结构修饰是通过统计地分散在材料总体积中的有限的高缺陷和致密区域的成核而发生的。 Buscarino等，Phys。版本B 80（2009）094202]。基于这些结果，我们提出了一个两成分模型来描述辐照材料中2260 cm〜（-1）附近的IR波段：前一个成分是由于Si-O-Si基团位于材料体积的一部分中。具有原始结构的材料，而后者是位于通过辐射致密的材料部分中的那些。我们的结果表明，该方案实际上可以可靠地定量描述电子辐照对a-SiO_2红外光谱的影响，并进一步支持了先前提出的压力和辐射诱导的压实过程之间的等效性。

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