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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Distribution of hydrogen in low temperature passivated amorphous silicon (a-Si:H) films from neutron reflectivity
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Distribution of hydrogen in low temperature passivated amorphous silicon (a-Si:H) films from neutron reflectivity

机译：中子反射率在低温钝化非晶硅（a-Si：H）薄膜中氢的分布

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摘要

Hydrogen plays a critical role in the passivation of dangling bonds in hydrogenated amorphous silicon (a-Si:H) to enable acceptable semiconducting characteristics during operation in devices. Low temperature processing enables fabrication of high performance transistors on flexible substrates such as plastic or stainless steel foils, but also leads to a decrease in the stability of the electronic performance. Generation of defects at the a-Si:H/insulator (hydrogenated silicon nitride, SiN:H) during electrical use due to localized heating will lead to decreased performance unless the dangling bonds are passivated in-situ by residual hydrogen. For this reason, the distribution of hydrogen within a-Si:H may be critical to understanding their aging phenomena. Here the distribution of hydrogen within both a-Si:H and SiN:H layers is probed with sub-nanometer resolution using neutron reflectivity. The hydrogen concentration within the bulk of the a-Si:H (11 ± 2 at.%) and SiN:H (18 ± 3 at.%) agree well with previous reports, but the increased resolution of the neutron measurement is able to identify an approximate three fold increase in the concentration within 2 nm of the semiconductor-insulator interface. This enhanced hydrogen content may act in the short-term as a sink to passivate any dangling bonds formed during operation.
机译：氢在氢化非晶硅（a-Si：H）中的悬空键的钝化中起关键作用，以在器件工作期间实现可接受的半导体特性。低温处理使得能够在诸如塑料或不锈钢箔之类的柔性基板上制造高性能晶体管，但是也导致电子性能的稳定性下降。由于局部加热，在电气使用过程中，在a-Si：H /绝缘体（氢化氮化硅，SiN：H）处产生缺陷将导致性能降低，除非悬空键被残留的氢原位钝化。因此，氢在a-Si：H中的分布对于理解其老化现象可能至关重要。在这里，使用中子反射率以亚纳米分辨率探测a-Si：H和SiN：H层中氢的分布。 a-Si：H（11±2 at。％）和SiN：H（18±3 at。％）的大部分中的氢浓度与以前的报道非常吻合，但是中子测量分辨率的提高能够可以确定半导体-绝缘体界面2 nm内的浓度大约增加三倍。这种增加的氢含量可在短期内充当吸收剂以钝化在操作期间形成的任何悬空键。

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