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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Crystallization and ferroelectric properties of Ge4Sb 1Te5 films
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Crystallization and ferroelectric properties of Ge4Sb 1Te5 films

机译：Ge4Sb 1Te5薄膜的结晶和铁电性能

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摘要

The aim of this work is to investigate the crystallization processes and the electrical properties of thin Ge4Sb1Te5 films (material for data storage) using 4-probe impedance, optical reflection, XRD, DSC and Piezoresponse Force Microscopy techniques. Experimental results have shown that bulk and thin films of crystalline Ge4Sb 1Te5 have ferroelectric properties with a ferroelectric-paraelectric transition temperature Tc about 600 K. This transition is reversible and probably related to the phase transformation from the fcc-Ge4Sb1Te5 to a phase close to the fcc-GeTe. It was found that films have ferroelectric domains with dimension approximately equal to the dimension of grains, when the films were crystallized without electrical field. An external electric field increases the degree of polarization of Ge4Sb1Te5 films which leads to an increase in domain dimensions and in capacitance at Tc of about two orders of magnitude compared to films crystallized without an electrical field. It was found that the applied external electrical field also increases grain dimensions and changes the crystallization kinetics, decreasing the onset of crystallization temperature, the effective activation energy of crystallization and the Avrami exponent. These changes could be related with an increase in atomic diffusion, promoting the growth of crystalline phase.
机译：这项工作的目的是使用4探针阻抗，光学反射，XRD，DSC和压电响应力显微镜技术研究Ge4Sb1Te5薄膜（用于数据存储的材料）的结晶过程和电性能。实验结果表明，晶体和晶体Ge4Sb 1Te5的薄膜具有铁电特性，铁电-顺电转变温度Tc约为600K。这种转变是可逆的，并且可能与从fcc-Ge4Sb1Te5到相近的相转变有关。 fcc-GeTe。当膜在没有电场的情况下结晶时，发现膜的铁电畴尺寸近似等于晶粒的尺寸。外部电场增加了Ge4Sb1Te5薄膜的极化程度，与没有电场结晶的薄膜相比，这导致畴尺寸和Tc处的电容增加了大约两个数量级。发现所施加的外部电场还增加了晶粒尺寸并改变了结晶动力学，从而降低了结晶温度的开始，结晶的有效活化能和Avrami指数。这些变化可能与原子扩散的增加​​，促进结晶相的生长有关。

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