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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Electrical properties of grain boundaries in polycrystalline materials under intrinsic or low doping
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Electrical properties of grain boundaries in polycrystalline materials under intrinsic or low doping

机译：本征或低掺杂下多晶材料中晶界的电学性质

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摘要

An analytical model is developed to study the electrical properties (electric field and potential distributions, potential energy barrier height and polarization phenomenon) of polycrystalline materials at intrinsic or low doping for detector and solar cell applications by considering an arbitrary amount of grain boundary charge and a finite width of grain boundary region. The general grain boundary model is also applicable to highly doped polycrystalline materials. The electric field and potential distributions are obtained by solving Poisson's equation in both depleted grains and grain boundary regions. The electric field and potential distributions across the detector are analysed under various doping, trapping and applied biases. The electric field collapses, i.e. a nearly zero-average electric field region exists in some part of the biased detector at high trapped charge densities at the grain boundaries. The model explains the conditions of existence of a zero-average field region, i.e. the polarization mechanisms in polycrystalline materials. The potential energy barrier at the grain boundary exists if the electric field changes its sign at the opposite side of the grain boundary. The energy barrier does not exist in all grain boundaries in the low-doped polycrystalline detector and it never exists in intrinsic polycrystalline detectors under applied bias condition provided that there is no charge trapping in the grain.
机译：开发了一种分析模型，通过考虑任意量的晶界电荷和晶格常数，研究了用于探测器和太阳能电池应用的本征或低掺杂下多晶材料的电性能（电场和电势分布，势能垒高度和极化现象）。晶界区域的有限宽度。一般的晶界模型也适用于高掺杂的多晶材料。电场和电势分布是通过求解贫晶粒和晶界区域中的泊松方程获得的。在各种掺杂，俘获和施加的偏压下，分析器两端的电场和电势分布得到分析。电场崩溃，即在晶界处的高俘获电荷密度下，在偏置检测器的某些部分中存在接近零平均的电场区域。该模型解释了零平均场区的存在条件，即多晶材料中的极化机理。如果电场在晶界的相反侧改变其符号，则在晶界处存在势能垒。能量势垒并不存在于低掺杂多晶检测器的所有晶粒边界中，并且在施加的偏置条件下，只要晶粒中没有电荷俘获，它就不会存在于本征多晶检测器中。

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