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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Behavioural investigation of InN nanodots by surface topographies and phase images
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Behavioural investigation of InN nanodots by surface topographies and phase images

机译:通过表面形貌和相图研究InN纳米点的行为

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We employ surface topographies and phase images to investigate InN nanodots. The samples are annealed at 450, 500 and 550 □. The results reveal that the statistical distributions of number density and mean size depend on annealing ambient. The behaviours of thermal annealing between InN films and InN nanodots are distinguishable: the alloying process of InN and GaN not only occurs in InN platelets, but also in InN nanodots once the samples are annealed at the growth temperature of InN nanodots, while the main change in InN films is the decomposition of InN into In droplets and N _2.
机译:我们采用表面形貌和相图研究InN纳米点。样品在450、500和550℃退火。结果表明,数密度和平均尺寸的统计分布取决于退火环境。 InN薄膜和InN纳米点之间的热退火行为是可以区分的:InN纳米片和GaN的合金化过程不仅发生在InN血小板中,而且在样品在InN纳米点的生长温度下退火后也发生在InN纳米点中,而主要变化是InN薄膜中的In是将InN分解为In液滴和N _2。

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