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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Magnetic phase diagram of non-magnetic few-electron quantum dot molecules
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Magnetic phase diagram of non-magnetic few-electron quantum dot molecules

机译:非磁性少数电子量子点分子的磁性相图

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摘要

A pathway to design non-magnetic artificial molecules which display controllable magnetic properties is addressed theoretically by studying the effects of in-plane electrical field, spinorbit interaction (SOI) and geometrical parameters on the magnetic phase transitions in few-electron lateral double quantum dots (DQDs). We demonstrate the tunability of the magnetic phase diagram of two-electron DQDs as the system is changed from a molecule to an atom, in both weak and strong SOI regimes. We find an unusual jump in the magnetization and an asymmetric peak of the magnetic susceptibility. In addition, both the asymmetric susceptibility peak position and the magnetic phase diagram are strongly dependent on the interdot tunnel coupling, which can be tuned effectively by changing repulsive barrier voltage and/or interdot distance, the number of electrons and the SOI strength. With increasing interdot tunnel-coupling strength, for instance, the rate of paramagnetic-to-diamagnetic phase area increases. The SOI makes the paramagnetic phase more stable under magnetic field. Moreover, the effects of geometry deviation on the electronic structure and magnetic property of the DQD are also discussed.
机译:通过研究平面内电场,自旋轨道相互作用(SOI)和几何参数对少数电子横向双量子点中的磁相变的影响,从理论上解决了设计显示可控磁性的非磁性人工分子的途径( DQD)。我们展示了在弱和强SOI机制中,随着系统从分子变为原子,双电子DQD的磁相图的可调性。我们发现磁化强度出现异常跳跃,磁化率峰值不对称。此外,非对称磁化率峰值位置和磁相图都强烈依赖于点间隧道耦合,可以通过改变排斥势垒电压和/或点间距离,电子数量和SOI强度来有效地调整点间隧道耦合。例如,随着点间隧道耦合强度的增加,顺磁至反磁相面积的比率增加。 SOI使顺磁相在磁场下更稳定。此外,还讨论了几何偏差对DQD的电子结构和磁性能的影响。

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