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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The influence of additional electrons on memory effect in nitrogen at low pressures
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The influence of additional electrons on memory effect in nitrogen at low pressures

机译:低压下附加电子对氮气中记忆效应的影响

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Memory effect in nitrogen based on experimental data of electrical breakdown time delay as a function of afterglow period in the presence of additional electrons has been investigated. The additional electrons were supplied as a result of extraction from the auxiliary electrode pair ornitrogen irradiation with the radioactive source ~(226)_(88)Ra of low activity. The results show that these electrons have an important role in the recombination of positive ions formed in mutual metastable molecules' collisions and collisions between metastable and highly vibrationally excited molecules in the early afterglow. As a consequence of the ion-electron recombination N(~4S) atoms are formed which, as well as N(~4S) atoms formed in previous discharge, have a significant influence on the memory effect in late afterglow. The presence of N(~4S) atoms in the late afterglow is tracked by monitoring the secondary emission which they induce via catalytic recombination on the cathode of a nitrogen-filled tube. Also, it has been shown that the contribution of secondary electrons which originate from N(~4S) atoms and Compton electrons when the radioactive source is and isn't present can be distinguished.
机译:在存在附加电子的情况下,已经根据电击穿时间延迟作为余辉周期的函数的实验数据研究了氮气中的记忆效应。作为辅助电极对的提取物或使用低活性放射源〜(226)_(88)Ra进行氮气辐照的结果,提供了额外的电子。结果表明,这些电子在余辉初期在相互亚稳态分子的碰撞以及亚稳态和高振动激发分子之间的碰撞中形成的正离子的重组中起着重要作用。由于离子电子重组,形成了N(〜4S)原子,以及先前放电中形成的N(〜4S)原子,对余辉后期的记忆效应也有重要影响。通过监测次生发射来跟踪晚霞中N(〜4S)原子的存在,这些次生发射是通过充氮管阴极上的催化重组诱导的。而且,已经表明,当存在和不存在放射源时,可以区分源自N(〜4S)原子和康普顿电子的二次电子的贡献。

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