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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Ion-beam modifications of mechanical and dimensional properties of silicon carbide
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Ion-beam modifications of mechanical and dimensional properties of silicon carbide

机译：离子束对碳化硅力学和尺寸性能的影响

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摘要

3C-SiC single crystal epitaxial layers, 6H-SiC single crystal plates and α-SiC Hexoloy sinters were irradiated with 4.0MeV Xe or 4.0MeV Au ions at room temperature. Mechanical and dimensional evolutions of silicon carbide are studied by means of nano-indentation and step-height measurements which are correlated with Rutherford backscattering spectrometry and channelling (RBS/C) data in single crystals. Irradiation with Xe ions induces a total lattice disorder related to amorphization for a fluence of 1×10 ~(15)cm ~2 in both polytypes. When complete amorphization is reached, around the same values of Young's modulus (350GPa) and Berkovich hardness (27GPa) are found in both polytypes. The out-of-plane expansion increases with irradiation dose and the saturation value measured in the amorphous layer (normalized to the projected range of the ions) is close to 20-25%. Modifications of macroscopic properties are mainly governed by the disordered fraction of the material in a two-step damage process. A similar behaviour of material evolution is found for the cubic and hexagonal polytypes, either in single crystals or sintered polycrystalline samples. Calculations of Young's modulus and volume swelling are carried out using the analytical (Reuss and Voigt) models of homogenization.
机译：在室温下，用4.0MeV Xe或4.0MeV Au离子对3C-SiC单晶外延层，6H-SiC单晶板和α-SiCHexoloy烧结体进行照射。通过纳米压痕和台阶高度测量研究了碳化硅的力学和尺寸演变，这些测量与单晶中的卢瑟福背散射光谱和通道（RBS / C）数据相关。在两种多型体中，用Xe离子辐照均会导致与非晶化有关的总晶格紊乱，注量为1×10〜（15）cm〜2。当达到完全非晶化时，两种多型体的杨氏模量（350GPa）和伯可维奇硬度（27GPa）大约相同。平面外膨胀随辐照剂量而增加，并且在非晶层中测得的饱和度值（标准化为离子的投影范围）接近20％至25％。宏观特性的修改主要受两步破坏过程中材料的无序分数控制。在单晶或烧结多晶样品中，对于立方和六边形多型体，发现了类似的材料演化行为。杨氏模量和体积溶胀的计算是使用均质的解析模型（Reuss和Voigt）进行的。

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