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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >A phosphor-free white light-emitting diode using In_2O _3: Tb transparent conductive light converter
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A phosphor-free white light-emitting diode using In_2O _3: Tb transparent conductive light converter

机译：使用In_2O _3：Tb透明导电光转换器的无磷白光发光二极管

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摘要

Tb-doped indium oxide (In_2O_3: Tb) films were deposited on a GaN-based near-ultraviolet (NUV) light-emitting diode (LED) as a transparent conductive light converter to form a white LED. The transmittance of the In_2O_3: Tb film (Tb at 10 wt%) exceeded 80% in visible light and the resistivity was 0.325 Ω cm. The In_2O _3 : Tb transparent conductive light converter was also employed on GaN-based LEDs. GaN-based NUV-LEDs with In_2O_3 : Tb film (Tb at 10 wt%) produced forward biases of 3.42 V at an injection current of 20 mA. With increasing temperature, increasing Tb~(3+) concentration and increasing injection current from 20 to 100 mA, the chromaticity coordinates barely changed in the white light area. Therefore, the GaN-based NUV-LED with In_2O_3 : Tb film had a stable white light colour, when temperature and injection current changed, and is suitable for solid-state lighting.
机译：将掺有Tb的氧化铟（In_2O_3：Tb）膜沉积在作为透明导电光转换器的GaN基近紫外（NUV）发光二极管（LED）上，以形成白色LED。 In_2O_3：Tb膜（Tb为10 wt％）在可见光下的透射率超过80％，电阻率为0.325Ωcm。 In_2O _3：Tb透明导电光转换器也用于基于GaN的LED。具有In_2O_3：Tb薄膜（Tb为10 wt％）的GaN基NUV-LED在20 mA注入电流下产生3.42 V的正向偏压。随着温度升高，Tb〜（3+）浓度增加以及注入电流从20 mA增加到100 mA，在白光区域色度坐标几乎没有变化。因此，当温度和注入电流改变时，具有In_2O_3：Tb膜的GaN基NUV-LED具有稳定的白光颜色，并且适合于固态照明。

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