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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Thermally assisted MRAMs: ultimate scalability and logic functionalities
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Thermally assisted MRAMs: ultimate scalability and logic functionalities

机译：热辅助MRAM：最终的可扩展性和逻辑功能

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This paper is focused on thermally assisted magnetic random access memories (TA-MRAMs). It explains how the heating produced by Joule dissipation around the tunnel barrier of magnetic tunnel junctions (MTJs) can be used advantageously to assist writing in MRAMs. The main idea is to apply a heating pulse to the junction simultaneously with a magnetic field (field-induced thermally assisted (TA) switching). Since the heating current also provides a spin-transfer torque (current-induced TA switching), the magnetic field lines can be removed to increase the storage density of TA-MRAMs. Ultimately, thermally induced anisotropy reorientation (TIAR)-assisted spin-transfer torque switching can be used in MTJs with perpendicular magnetic anisotropy to obtain ultimate downsize scalability with reduced power consumption. TA writing allows extending the downsize scalability of MRAMs as it does in ard disk drive technology, but it also allows introducing new functionalities particularly useful for security applications (Match-in-Place? technology).
机译：本文的重点是热辅助磁随机存取存储器（TA-MRAM）。它说明了如何通过磁隧道结（MTJ）的隧道势垒周围的焦耳耗散产生的热量可以有利地用于协助写入MRAM。主要思想是在施加磁场的同时将加热脉冲施加到结（场感应热辅助（TA）切换）。由于加热电流还提供了自旋转移转矩（电流引起的TA切换），因此可以去除磁场线以增加TA-MRAM的存储密度。最终，可以在具有垂直磁各向异性的MTJ中使用热诱导各向异性重定向（TIAR）辅助的自旋传递扭矩切换，以在减小功耗的情况下获得最终的尺寸可扩展性。 TA写入可以像在磁盘驱动器技术中一样扩展MRAM的缩小扩展性，但是它还可以引入对安全性应用特别有用的新功能（就地匹配技术）。

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