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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >A tris(8-hydroxyquinoline) aluminum-based organic bistable device using ITO surfaces modified by Ag nanoparticles
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A tris(8-hydroxyquinoline) aluminum-based organic bistable device using ITO surfaces modified by Ag nanoparticles

机译：利用Ag纳米粒子修饰的ITO表面的三（8-羟基喹啉）铝基有机双稳态器件

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摘要

A tris (8-hydroxyquinoline) aluminum (Alq_3)-based organic bistable device (OBD) using Al electrode and ITO electrode modified by Ag nanoparticles (NPs) was reported. The OBD exhibits high ON/OFF switching ratios in the range of 10~2-10~3 and long retention time over 10~4 s. The influence of the Ag NPs densities, as well as the Alq _3 film thickness on the switch performance current-voltage (I-V) of the OBDs was studied. Correlation between filament formation mechanism and charge storage mechanism was observed by analysing the I-V characteristics of OBDs with different Alq_3 film thickness. As for the Alq_3 film with thickness of 300 nm, the trapping effect of Ag NPs leads to both ON and OFF states for OBD; for 100 nm thick Alq_3 film, the effect of filamentation dominates in the ON and OFF states of OBD. For the case of 200 nm thick Alq_3 film, however, the ON state results from the filamentation effect, while trapping effect is responsible for the OFF state. In addition, the diffusion effect of Al atoms in Alq_3 film in the devices was discussed and was expected to explain this thickness-dependence relationship.
机译：报道了使用由Ag纳米颗粒（NPs）修饰的Al电极和ITO电极的基于三（8-羟基喹啉）铝（Alq_3）的有机双稳态器件（OBD）。 OBD在10〜2-10〜3范围内具有较高的ON / OFF切换率，并且在10〜4 s内具有较长的保留时间。研究了Ag NPs密度以及Alq _3膜厚度对OBD开关性能电流-电压（I-V）的影响。通过分析不同Alq_3膜厚的OBD的I-V特性，观察了灯丝形成机理与电荷存储机理之间的相关性。对于厚度为300 nm的Alq_3薄膜，Ag NPs的俘获效应导致OBD处于开态和关态。对于100 nm厚的Alq_3膜，在OBD的ON和OFF状态下，丝状化作用占主导。但是，对于200 nm厚的Alq_3膜，导通状态是由丝状效应产生的，而捕获效应是造成OFF状态的原因。另外，讨论了Al原子在器件中的Alq_3膜中的扩散效应，并有望解释这种厚度依赖性关系。

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