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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Spin-dependent six-fold symmetric anisotropic magnetoresistance in epitaxial magnetite films
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Spin-dependent six-fold symmetric anisotropic magnetoresistance in epitaxial magnetite films

机译：外延磁铁矿薄膜中自旋相关的六重对称各向异性磁阻

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摘要

Six-fold anisotropic magnetoresistance (AMR) was observed in epitaxial Fe_3O_4(1 1 1) films on conductive ZnO (0 0 0 1), while the current flowed perpendicularly to the film plane and the magnetic field rotated in the film plane, demonstrating the close relation between AMR and magnetocrystalline anisotropy. The spin injection efficiency of Fe _3O_4 films was modulated from 60% to 20% with increasing underlayer ZnO surface roughness through changing the sputtering pressure. Larger AMR is observed in epitaxial Fe_3O_4(1 1 1) films with higher spin injection efficiency. Under the induction of a magnetic field and magnetocrystalline anisotropic fields along the easy axis, it is supposed that the scattering of carriers by the noncollinear moments near antiphase boundaries is weaker for the films with higher spin injection efficiency.
机译：在导电ZnO（0 0 0 1）上的外延Fe_3O_4（1 1 1）薄膜中观察到六倍的各向异性磁阻（AMR），而电流垂直于薄膜平面流动并且磁场在薄膜平面中旋转，这说明了AMR与磁晶各向异性之间的密切关系。通过改变溅射压力，随着下层ZnO表面粗糙度的增加，Fe _3O_4薄膜的自旋注入效率从60％调整为20％。在具有较高的自旋注入效率的外延Fe_3O_4（1 1 1）薄膜中观察到较大的AMR。假定在沿易轴的磁场和磁晶各向异性场的感应下，对于自旋注入效率较高的薄膜，载流子在反相位边界附近被非共线矩的散射较弱。

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