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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate
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High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate

机译：原子平坦的高电阻衬底上化学修饰的石墨烯中的高载流子迁移率

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摘要

Special high-resistive substrates for graphene sheets are suggested with the aim of providing high conductivity and mobility of charge carriers in graphene. The substrates were created from N-methylpyrrolidone-intercalated few-layer graphene (FLG) using anneals given to FLG samples in the temperature range 100-180 °C. Structures containing a highly conductive single-layer graphene on an atomically flat, high-resistive substrate were produced by recovering the top-layer conductivity. The obtained structures have potential in electronic applications due to a high carrier mobility (up to 16 000-42 000 cm~2 V~(-1) s~(-1)) and strong gate-voltage-induced modulation (by 4-5 orders of magnitude) of the current in the top graphene layer. The strong gate-voltage-induced modulation of the current clearly demonstrated that the top layer was chemically modified graphene. The possibility of governing the surface conductivity in the described structures offers a unique tool for two-dimensional nanodesign.
机译：提出了用于石墨烯片的特殊高电阻衬底，其目的是提供石墨烯中的电荷载流子的高电导率和迁移率。使用在100-180°C温度范围内对FLG样品进行退火处理，由N-甲基吡咯烷酮插层的几层石墨烯（FLG）制成基材。通过恢复顶层电导率，可以生产出在原子平面的高电阻衬底上包含高导电单层石墨烯的结构。由于高的载流子迁移率（高达16 000-42 000 cm〜2 V〜（-1）s〜（-1））和强大的栅极电压感应调制（通过4-倍），所得结构在电子应用中具有潜力。 5个数量级的电流在顶部石墨烯层中。栅极电压引起的强电流调制清楚地表明，顶层是化学修饰的石墨烯。在所述结构中控制表面电导率的可能性为二维纳米设计提供了独特的工具。

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