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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition
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Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

机译：GaAsSb / InAs / GaAs量子点异质结构的I型II型能带对准受点尺寸和减应力层组成的影响

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摘要

The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure of InAs/GaAs QDs covered by a GaAsSb strain-reducing layer. Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs covered with a GaAsSb strain-reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPE prepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV redshift in comparison with similarly prepared QDs covered by GaAs.
机译：这项工作的目的是通过对由GaAsSb应变减小层覆盖的InAs / GaAs QD的金属有机气相外延（MOVPE）制备的结构进行工程设计，使量子点（QD）的光致发光（PL）向着通信波长红移。我们的结果证明，GaAsSb成分和QD尺寸均可控制I型或II型能带对准。维持I型异质结构对于QD结构的高发光效率和发射波长稳定性很重要。 GaAsSb应变减小层覆盖的InAs量子点中电子结构的模拟以及实验结果表明，增加量子点尺寸对于从I型异质结构获得更长波长PL的重要性。用MoVPE制备的I型QD结构获得的PL最大波长为1371 nm，其中GabSb中的Sb为14％。与GaAs覆盖的类似量子点相比，这种结构的PL强度高出七倍，PL峰窄两倍，并且红移为85 meV。

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